Cite
Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length.
MLA
Song, Seunguk, et al. “Atomic Transistors Based on Seamless Lateral Metal-Semiconductor Junctions with a Sub-1-Nm Transfer Length.” Nature Communications, vol. 13, no. 1, Aug. 2022, p. 4916. EBSCOhost, https://doi.org/10.1038/s41467-022-32582-9.
APA
Song, S., Yoon, A., Ha, J.-K., Yang, J., Jang, S., Leblanc, C., Wang, J., Sim, Y., Jariwala, D., Min, S. K., Lee, Z., & Kwon, S.-Y. (2022). Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length. Nature Communications, 13(1), 4916. https://doi.org/10.1038/s41467-022-32582-9
Chicago
Song, Seunguk, Aram Yoon, Jong-Kwon Ha, Jihoon Yang, Sora Jang, Chloe Leblanc, Jaewon Wang, et al. 2022. “Atomic Transistors Based on Seamless Lateral Metal-Semiconductor Junctions with a Sub-1-Nm Transfer Length.” Nature Communications 13 (1): 4916. doi:10.1038/s41467-022-32582-9.