High-Performance Broad-Band Photodetection Based on Graphene-MoS 2 x Se 2(1- x ) Alloy Engineered Phototransistors.

The concept of alloy engineering has emerged as a viable technique toward tuning the band gap as well as engineering the defect levels in two-dimensional transition-metal dichalcognides (TMDCs). The possibility of synthesizing these ultrathin TMDC materials through a chemical route has opened up realistic possibilities to fabricate hybrid multifunctional devices. By synthesizing nanosheets with different composites of MoS _{2 x} Se _{2(1- x )} ( x = 0 - 1) using simple chemical methods, we systematically investigate the photoresponse properties of three terminal hybrid devices by decorating large-area graphene with these nanosheets ( x = 0, 0.5, 1) in 2D-2D configurations. Among them, the graphene-MoSSe hybrid phototransistor exhibits optoelectronic properties superior to those of its binary counterparts. The device exhibits extremely high photoresponsivity (>10 ⁴ A/W), low noise equivalent power (∼10 ^-14 W/Hz ^0.5 ), and higher specific detectivity (∼10 ¹¹ jones) in the wide UV-NIR (365-810 nm) range with excellent gate tunability. The broad-band light absorption of MoSSe, ultrafast charge transport in graphene, and controllable defect engineering in MoSSe makes this device extremely attractive. Our work demonstrates the large-area scalability with the wafer-scale production of MoS _{2 x} Se _{2(1- x )} alloys, having important implications toward the facile and scalable fabrication of high-performance optoelectronic devices and providing important insights into the fundamental interactions between van der Waals materials.