The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins.

MLA

Thornton, Chappel S., et al. “The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins.” ACS Applied Materials & Interfaces, vol. 14, no. 25, June 2022, pp. 29422–30. EBSCOhost, https://doi.org/10.1021/acsami.2c05470.

APA

Thornton, C. S., Tuttle, B., Turner, E., Law, M. E., Pantelides, S. T., Wang, G. T., & Jones, K. S. (2022). The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins. ACS Applied Materials & Interfaces, 14(25), 29422–29430. https://doi.org/10.1021/acsami.2c05470

Chicago

Thornton, Chappel S, Blair Tuttle, Emily Turner, Mark E Law, Sokrates T Pantelides, George T Wang, and Kevin S Jones. 2022. “The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins.” ACS Applied Materials & Interfaces 14 (25): 29422–30. doi:10.1021/acsami.2c05470.