New fabrication method for di-indium tri-sulfuric (In 2 S 3 ) thin films.

Authors :: Ali AI
Ibrahim M
Hassen A
Source :: Scientific reports [Sci Rep] 2022 Apr 29; Vol. 12 (1), pp. 7033. Date of Electronic Publication: 2022 Apr 29.
Publication Year :: 2022
Abstract: Di-indium tri-sulfuric (In <subscript>2</subscript> S <subscript>3</subscript> ) thin films are fabricated with annealing indium thin films in a sulfur environment. The effect of both annealing temperature and pressure on the structure, morphology, Raman, and photoluminescence (PL) spectroscopy has been studied. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) of the prepared thin films showed different structural phases and morphology with varying annealing temperature and pressure. Energy dispersive X-ray (EDX) analysis confirmed the chemical composition and the atomic ratio of In/S for the In <subscript>2</subscript> S <subscript>3</subscript> thin films. The optimum annealing conditions of In <subscript>2</subscript> S <subscript>3</subscript> thin films are 550 °C and 100 Torr. The outcome results revealed a new good growth method for In <subscript>2</subscript> S <subscript>3</subscript> thin films to be used for different applications.<br /> (© 2022. The Author(s).)