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α-BaF 2 Nanoparticle Substrate-Enabled γ-CsPbI 3 Heteroepitaxial Growth for Efficient and Bright Deep-Red Light-Emitting Diodes.
- Source :
-
Journal of the American Chemical Society [J Am Chem Soc] 2022 May 11; Vol. 144 (18), pp. 8162-8170. Date of Electronic Publication: 2022 Apr 20. - Publication Year :
- 2022
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Abstract
- All-inorganic CsPbI <subscript>3</subscript> perovskite is attractive for deep-red light-emitting diodes (LEDs) because of its excellent carrier mobility, high color purity, and solution processability. However, the high phase transition energy barrier of optically active CsPbI <subscript>3</subscript> black phase hinders the fabrication of efficient and bright LEDs. Here, we report a novel α-BaF <subscript>2</subscript> nanoparticle substrate-promoted solution-processable heteroepitaxial growth to overcome this hindrance and obtain high-quality optically active γ-CsPbI <subscript>3</subscript> thin films, achieving efficient and bright deep-red LEDs. We unravel that the highly exposed planes on the α-BaF <subscript>2</subscript> nanoparticle-based heteroepitaxial growth substrate have a 99.5% lattice matching degree with the (110) planes of γ-CsPbI <subscript>3</subscript> . This ultrahigh lattice matching degree initiates solution-processed interfacial strain-free epitaxial growth of low-defect and highly oriented γ-CsPbI <subscript>3</subscript> thin films on the substrate. The obtained γ-CsPbI <subscript>3</subscript> thin films are uniform, smooth, and highly luminescent, based on which we fabricate efficient and bright deep-red LEDs with a high peak external quantum efficiency of 14.1% and a record luminance of 1325 cd m <superscript>-2</superscript> .
Details
- Language :
- English
- ISSN :
- 1520-5126
- Volume :
- 144
- Issue :
- 18
- Database :
- MEDLINE
- Journal :
- Journal of the American Chemical Society
- Publication Type :
- Academic Journal
- Accession number :
- 35442667
- Full Text :
- https://doi.org/10.1021/jacs.2c01034