Cite
Gate-Tunable Transport in Quasi-One-Dimensional α-Bi 4 I 4 Field Effect Transistors.
MLA
Liu, Yulu, et al. “Gate-Tunable Transport in Quasi-One-Dimensional α-Bi 4 I 4 Field Effect Transistors.” Nano Letters, vol. 22, no. 3, Feb. 2022, pp. 1151–58. EBSCOhost, https://doi.org/10.1021/acs.nanolett.1c04264.
APA
Liu, Y., Chen, R., Zhang, Z., Bockrath, M., Lau, C. N., Zhou, Y.-F., Yoon, C., Li, S., Liu, X., Dhale, N., Lv, B., Zhang, F., Watanabe, K., Taniguchi, T., Huang, J., Yi, M., Oh, J. S., & Birgeneau, R. J. (2022). Gate-Tunable Transport in Quasi-One-Dimensional α-Bi 4 I 4 Field Effect Transistors. Nano Letters, 22(3), 1151–1158. https://doi.org/10.1021/acs.nanolett.1c04264
Chicago
Liu, Yulu, Ruoyu Chen, Zheneng Zhang, Marc Bockrath, Chun Ning Lau, Yan-Feng Zhou, Chiho Yoon, et al. 2022. “Gate-Tunable Transport in Quasi-One-Dimensional α-Bi 4 I 4 Field Effect Transistors.” Nano Letters 22 (3): 1151–58. doi:10.1021/acs.nanolett.1c04264.