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Unraveling the Atomic Structure of Bulk Binary Ga-Te Glasses with Surprising Nanotectonic Features for Phase-Change Memory Applications.
- Source :
-
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2021 Aug 11; Vol. 13 (31), pp. 37363-37379. Date of Electronic Publication: 2021 Jul 28. - Publication Year :
- 2021
-
Abstract
- Binary Ge-Te and ternary Ge-Sb-Te systems belong to flagship phase-change materials (PCMs) and are used in nonvolatile memory applications and neuromorphic computing. The working temperatures of these PCMs are limited by low- T glass transition and crystallization phenomena. Promising high- T PCMs may include gallium tellurides; however, the atomic structure and transformation processes for amorphous Ga-Te binaries are simply missing. Using high-energy X-ray diffraction and Raman spectroscopy supported by first-principles simulations, we elucidate the short- and intermediate-range order in bulk glassy Ga <subscript>x</subscript> Te <subscript>1- x </subscript> , 0.17 ≤ x ≤ 0.25, following their thermal, electric, and optical properties, revealing a semiconductor-metal transition above melting. We also show that a phase change in binary Ga-Te is characterized by a very unusual nanotectonic compression with the high internal transition pressure reaching 4-8 GPa, which appears to be beneficial for PCM applications increasing optical and electrical contrast between the SET and RESET states and decreasing power consumption.
Details
- Language :
- English
- ISSN :
- 1944-8252
- Volume :
- 13
- Issue :
- 31
- Database :
- MEDLINE
- Journal :
- ACS applied materials & interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 34318661
- Full Text :
- https://doi.org/10.1021/acsami.1c09070