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Metallization of Quantum Material GaTa 4 Se 8 at High Pressure.

Authors :
Deng H
Zhang J
Jeong MY
Wang D
Hu Q
Zhang S
Sereika R
Nakagawa T
Chen B
Yin X
Xiao H
Hong X
Ren J
Han MJ
Chang J
Weng H
Ding Y
Lin HQ
Mao HK
Source :
The journal of physical chemistry letters [J Phys Chem Lett] 2021 Jun 17; Vol. 12 (23), pp. 5601-5607. Date of Electronic Publication: 2021 Jun 10.
Publication Year :
2021

Abstract

Pressure is a unique thermodynamic variable to explore the phase competitions and novel phases inaccessible at ambient conditions. The resistive switching material GaTa <subscript>4</subscript> Se <subscript>8</subscript> displays several quantum phases under pressure, such as a J <subscript>eff</subscript> = 3/2 Mott insulator, a correlated quantum magnetic metal, and d -wave topological superconductivity, which has recently drawn considerable interest. Using high-pressure Raman spectroscopy, X-ray diffraction, extended X-ray absorption, transport measurements, and theoretical calculations, we reveal a complex phase diagram for GaTa <subscript>4</subscript> Se <subscript>8</subscript> at pressures exceeding 50 GPa. In this previously unattained pressure regime, GaTa <subscript>4</subscript> Se <subscript>8</subscript> ranges from a Mott insulator to a metallic phase and exhibits superconducting phases. In contrast to previous studies, we unveil a hidden correlation between the structural distortion and band gap prior to the insulator-to-metal transition, and the metallic phase shows superconductivity with structural and magnetic properties that are distinctive from the lower-pressure phase. These discoveries highlight that GaTa <subscript>4</subscript> Se <subscript>8</subscript> is a unique material to probe novel quantum phases from a structural, metallicity, magnetism, and superconductivity perspective.

Details

Language :
English
ISSN :
1948-7185
Volume :
12
Issue :
23
Database :
MEDLINE
Journal :
The journal of physical chemistry letters
Publication Type :
Academic Journal
Accession number :
34110170
Full Text :
https://doi.org/10.1021/acs.jpclett.1c01069