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Rare-earth doped micro-emitters made by lift-off processing in pulsed laser deposited layers on Si substrate.
- Source :
-
Optics express [Opt Express] 2021 Mar 01; Vol. 29 (5), pp. 7321-7326. - Publication Year :
- 2021
-
Abstract
- Rare earth emitters are promising in integrated optics but require complex integration on silicon. In this work, we have fabricated an Y <subscript>2</subscript> O <subscript>3</subscript> :Eu <superscript>3+</superscript> micro-emitter on SiO <subscript>2</subscript> on Si substrate without etching. Since pulsed laser deposition produces a high quality layer at room temperature, material can be locally deposited on top of substrates by lift-off processing. After annealing, microstructures exhibit good crystallographic quality with controlled dimensions for light confinement and narrow emission. This works allows envisioning rare-earth doped micro-photonic structures directly integrated on silicon without etching, which opens the way to integration of new functional materials on silicon platform.
Details
- Language :
- English
- ISSN :
- 1094-4087
- Volume :
- 29
- Issue :
- 5
- Database :
- MEDLINE
- Journal :
- Optics express
- Publication Type :
- Academic Journal
- Accession number :
- 33726235
- Full Text :
- https://doi.org/10.1364/OE.416450