Cite
Enhanced interfacial reaction of silicon carbide fillers onto the metal substrate in carbon nanotube paste for reliable field electron emitters.
MLA
Go, Eunsol, et al. “Enhanced Interfacial Reaction of Silicon Carbide Fillers onto the Metal Substrate in Carbon Nanotube Paste for Reliable Field Electron Emitters.” Nanotechnology, vol. 32, no. 19, May 2021, p. 190001. EBSCOhost, https://doi.org/10.1088/1361-6528/abe1ef.
APA
Go, E., Kim, J.-W., Lee, J.-W., Ahn, Y., Jeong, J.-W., Kang, J.-T., Park, S., Yun, K. N., Kim, S. J., Kim, S., Yeon, J.-H., & Song, Y.-H. (2021). Enhanced interfacial reaction of silicon carbide fillers onto the metal substrate in carbon nanotube paste for reliable field electron emitters. Nanotechnology, 32(19), 190001. https://doi.org/10.1088/1361-6528/abe1ef
Chicago
Go, Eunsol, Jae-Woo Kim, Jeong-Woong Lee, Yujung Ahn, Jin-Woo Jeong, Jun-Tae Kang, Sora Park, et al. 2021. “Enhanced Interfacial Reaction of Silicon Carbide Fillers onto the Metal Substrate in Carbon Nanotube Paste for Reliable Field Electron Emitters.” Nanotechnology 32 (19): 190001. doi:10.1088/1361-6528/abe1ef.