Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors.

MLA

Swallow, Jack E. N., et al. “Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors.” ACS Applied Materials & Interfaces, vol. 13, no. 2, Jan. 2021, pp. 2807–19. EBSCOhost, https://doi.org/10.1021/acsami.0c16021.

APA

Swallow, J. E. N., Palgrave, R. G., Murgatroyd, P. A. E., Regoutz, A., Lorenz, M., Hassa, A., Grundmann, M., von Wenckstern, H., Varley, J. B., & Veal, T. D. (2021). Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors. ACS Applied Materials & Interfaces, 13(2), 2807–2819. https://doi.org/10.1021/acsami.0c16021

Chicago

Swallow, Jack E N, Robert G Palgrave, Philip A E Murgatroyd, Anna Regoutz, Michael Lorenz, Anna Hassa, Marius Grundmann, Holger von Wenckstern, Joel B Varley, and Tim D Veal. 2021. “Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors.” ACS Applied Materials & Interfaces 13 (2): 2807–19. doi:10.1021/acsami.0c16021.