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Ultrasensitive Magnetic Sensors Enabled by Heterogeneous Integration of Graphene Hall Elements and Silicon Processing Circuits.

Authors :
Dai T
Chen C
Huang L
Jiang J
Peng LM
Zhang Z
Source :
ACS nano [ACS Nano] 2020 Dec 22; Vol. 14 (12), pp. 17606-17614. Date of Electronic Publication: 2020 Nov 19.
Publication Year :
2020

Abstract

Graphene Hall elements (GHEs) have been demonstrated to be promising magnetic field sensors with excellent sensitivity, linearity, temperature stability, and compatibility with complementary-metal-oxide-semiconductor (CMOS)-integrated circuits (ICs). However, the demonstrated GHEs have still not exhibited a comprehensive advantage in performance over commercial integrated Hall sensors which were implemented in integrated Hall element and CMOS processing ICs. In this work, we develop a technology for the three-dimensional (3D) heterogeneous integration of silicon-based CMOS ICs and GHEs, and the fabricated magnetic field sensors outperform commercial high-end integrated Hall sensors. Specifically, the integrated Hall sensors are implemented in a stacked integration on Si based on a chopper programmable-gain amplifier (CPGA), a chopper-stabilized second-order sigma-delta modulator (CSDM), and graphene-based Hall elements on monochips. GHEs with high sensitivity (up to 1000 A/VT) are fabricated with a compatible process on a smoothened silicon nitride passivation layer of silicon-based CMOS ICs, and the two device layers are connected by an interlayer. The heterogeneous integrated Hall ICs exhibit current and voltage magnetic sensitivities up to 64 000 A/VT and 6.12 V/VT, respectively, which are much higher than those in all other reported nanomaterial-based Hall sensors and even in high-end commercial Hall ICs. Furthermore, the 3D heterogeneous integration technology used here can be extended as a universal technology for integrating nanomaterial-based sensors and Si CMOS ICs.

Details

Language :
English
ISSN :
1936-086X
Volume :
14
Issue :
12
Database :
MEDLINE
Journal :
ACS nano
Publication Type :
Academic Journal
Accession number :
33211966
Full Text :
https://doi.org/10.1021/acsnano.0c08435