High broadband photoconductivity of few-layered MoS 2 field-effect transistors measured using multi-terminal methods: effects of contact resistance.

MLA

Das, Priyanka, et al. “High Broadband Photoconductivity of Few-Layered MoS 2 Field-Effect Transistors Measured Using Multi-Terminal Methods: Effects of Contact Resistance.” Nanoscale, vol. 12, no. 45, Nov. 2020, pp. 22904–16. EBSCOhost, https://doi.org/10.1039/d0nr07311c.

APA

Das, P., Nash, J., Webb, M., Burns, R., Mapara, V. N., Ghimire, G., Rosenmann, D., Divan, R., Karaiskaj, D., McGill, S. A., Sumant, A. V., Dai, Q., Ray, P. C., Tawade, B., Raghavan, D., Karim, A., & Pradhan, N. R. (2020). High broadband photoconductivity of few-layered MoS 2 field-effect transistors measured using multi-terminal methods: effects of contact resistance. Nanoscale, 12(45), 22904–22916. https://doi.org/10.1039/d0nr07311c

Chicago

Das, Priyanka, Jawnaye Nash, Micah Webb, Raelyn Burns, Varun N Mapara, Govinda Ghimire, Daniel Rosenmann, et al. 2020. “High Broadband Photoconductivity of Few-Layered MoS 2 Field-Effect Transistors Measured Using Multi-Terminal Methods: Effects of Contact Resistance.” Nanoscale 12 (45): 22904–16. doi:10.1039/d0nr07311c.