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Photoconductivity Switching in MoTe 2 /Graphene Heterostructure by Trap-Assisted Photogating.

Authors :
Kim HJ
Lee KJ
Park J
Shin GH
Park H
Yu K
Choi SY
Source :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2020 Aug 26; Vol. 12 (34), pp. 38563-38569. Date of Electronic Publication: 2020 Aug 11.
Publication Year :
2020

Abstract

Negative photoconductivity (NPC), a reduction in photoconductivity under light illumination, could provide low power consumption and high-speed frequency response. The NPC has been generally observed in low-dimensional materials, which can be easily affected by the trapping of photocarriers. However, a gradual transition between NPC and positive photoconductivity (PPC) by controlling the light intensity has not been reported. In this study, a gradual and reversible switching between NPC and PPC is achieved in a van der Waals heterostructure of graphene and MoTe <subscript>2</subscript> . The initially observed NPC state becomes a PPC state with the increase in light intensity. The switching between NPC and PPC is considered to originate from the hole trapping in MoTe <subscript>2</subscript> . The hole trapping can induce a shift in the Fermi level of MoTe <subscript>2</subscript> and thus change the junction characteristics between the graphene and MoTe <subscript>2</subscript> , which determine the photoresponse type (NPC or PPC). Notably, the switching from one state to the other can also be reversed, depending on the gate bias. The stable and reversible effect upon light illumination and application of a gate voltage could be used in optoelectronic devices and optical communications.

Details

Language :
English
ISSN :
1944-8252
Volume :
12
Issue :
34
Database :
MEDLINE
Journal :
ACS applied materials & interfaces
Publication Type :
Academic Journal
Accession number :
32846468
Full Text :
https://doi.org/10.1021/acsami.0c09960