Back to Search Start Over

Self-Assembled SnO 2 /SnSe 2 Heterostructures: A Suitable Platform for Ultrasensitive NO 2 and H 2 Sensing.

Authors :
Paolucci V
D'Olimpio G
Kuo CN
Lue CS
Boukhvalov DW
Cantalini C
Politano A
Source :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2020 Jul 29; Vol. 12 (30), pp. 34362-34369. Date of Electronic Publication: 2020 Jul 14.
Publication Year :
2020

Abstract

By means of experiments and theory, the gas-sensing properties of tin diselenide (SnSe <subscript>2</subscript> ) were elucidated. We discover that, while the stoichiometric single crystal is chemically inert even in air, the nonstoichiometric sample assumes a subnanometric SnO <subscript>2</subscript> surface oxide layer once exposed to ambient atmosphere. The presence of Se vacancies induces the formation of a metastable SeO <subscript>2</subscript> -like layer, which is finally transformed into a SnO <subscript>2</subscript> skin. Remarkably, the self-assembled SnO <subscript>2</subscript> /SnSe <subscript>2-x</subscript> heterostructure is particularly efficient in gas sensing, whereas the stoichiometric SnSe <subscript>2</subscript> sample does not show sensing properties. Congruently with the theoretical model, direct sensing tests carried out on SnO <subscript>2</subscript> /SnSe <subscript>2- x </subscript> at an operational temperature of 150 °C provided sensitivities of (1.06 ± 0.03) and (0.43 ± 0.02) [ppm] <superscript>-1</superscript> for NO <subscript>2</subscript> and H <subscript>2</subscript> , respectively, in dry air. The corresponding calculated limits of detection are (0.36 ± 0.01) and (3.6 ± 0.1) ppm for NO <subscript>2</subscript> and H <subscript>2</subscript> , respectively. No detectable changes in gas-sensing performances are observed in a time period extended above six months. Our results pave the way for a novel generation of ambient-stable gas sensor based on self-assembled heterostructures formed taking advantage on the natural interaction of substoichiometric van der Waals semiconductors with air.

Details

Language :
English
ISSN :
1944-8252
Volume :
12
Issue :
30
Database :
MEDLINE
Journal :
ACS applied materials & interfaces
Publication Type :
Academic Journal
Accession number :
32662970
Full Text :
https://doi.org/10.1021/acsami.0c07901