High Anti-Interference Ti 3 C 2 T x MXene Field-Effect-Transistor-Based Alkali Indicator.

MLA

Liu, Chengbin, et al. “High Anti-Interference Ti 3 C 2 T x MXene Field-Effect-Transistor-Based Alkali Indicator.” ACS Applied Materials & Interfaces, vol. 12, no. 29, July 2020, pp. 32970–78. EBSCOhost, https://doi.org/10.1021/acsami.0c09921.

APA

Liu, C., Hao, S., Chen, X., Zong, B., & Mao, S. (2020). High Anti-Interference Ti 3 C 2 T x MXene Field-Effect-Transistor-Based Alkali Indicator. ACS Applied Materials & Interfaces, 12(29), 32970–32978. https://doi.org/10.1021/acsami.0c09921

Chicago

Liu, Chengbin, Sibei Hao, Xiaoyan Chen, Boyang Zong, and Shun Mao. 2020. “High Anti-Interference Ti 3 C 2 T x MXene Field-Effect-Transistor-Based Alkali Indicator.” ACS Applied Materials & Interfaces 12 (29): 32970–78. doi:10.1021/acsami.0c09921.