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Al x In 1-x N on Si (100) Solar Cells (x = 0-0.56) Deposited by RF Sputtering.
- Source :
-
Materials (Basel, Switzerland) [Materials (Basel)] 2020 May 19; Vol. 13 (10). Date of Electronic Publication: 2020 May 19. - Publication Year :
- 2020
-
Abstract
- We investigate the photovoltaic performance of solar cells based on n-Al <subscript>x</subscript> In <subscript>1-x</subscript> N (x = 0-0.56) on p-Si (100) hetero-junctions deposited by radio frequency sputtering. The Al <subscript>x</subscript> In <subscript>1-x</subscript> N layers own an optical bandgap absorption edge tuneable from 1.73 eV to 2.56 eV within the Al content range. This increase of Al content results in more resistive layers (≈10 <superscript>-4</superscript> -1 Ω·cm) while the residual carrier concentration drops from ~10 <superscript>21</superscript> to ~10 <superscript>19</superscript> cm <superscript>-3</superscript> . As a result, the top n-contact resistance varies from ≈10 <superscript>-1</superscript> to 1 MΩ for InN to Al <subscript>0.56</subscript> In <subscript>0.44</subscript> N-based devices, respectively. Best results are obtained for devices with 28% Al that exhibit a broad external quantum efficiency covering the full solar spectrum with a maximum of 80% at 750 nm, an open-circuit voltage of 0.39 V, a short-circuit current density of 17.1 mA/cm <superscript>2</superscript> and a conversion efficiency of 2.12% under air mass 1.5 global (AM1.5G) illumination (1 sun), rendering them promising for novel low-cost III-nitride on Si photovoltaic devices. For Al contents above 28%, the electrical performance of the structures lessens due to the high top-contact resistivity.
Details
- Language :
- English
- ISSN :
- 1996-1944
- Volume :
- 13
- Issue :
- 10
- Database :
- MEDLINE
- Journal :
- Materials (Basel, Switzerland)
- Publication Type :
- Academic Journal
- Accession number :
- 32438685
- Full Text :
- https://doi.org/10.3390/ma13102336