Double MgO-Based Perpendicular Magnetic Tunnel Junction for Artificial Neuron.

Authors :: Kim DW
Yi WS
Choi JY
Ashiba K
Baek JU
Jun HS
Kim JJ
Park JG
Source :: Frontiers in neuroscience [Front Neurosci] 2020 Apr 30; Vol. 14, pp. 309. Date of Electronic Publication: 2020 Apr 30 (Print Publication: 2020).
Publication Year :: 2020
Abstract: A perpendicular spin transfer torque (p-STT)-based neuron was developed for a spiking neural network (SNN). It demonstrated the integration behavior of a typical neuron in an SNN; in particular, the integration behavior corresponding to magnetic resistance change gradually increased with the input spike number. This behavior occurred when the spin electron directions between double Co <subscript>2</subscript> Fe <subscript>6</subscript> B <subscript>2</subscript> free and pinned layers in the p-STT-based neuron were switched from parallel to antiparallel states. In addition, a neuron circuit for integrate-and-fire operation was proposed. Finally, pattern-recognition simulation was performed for a single-layer SNN.<br /> (Copyright © 2020 Kim, Yi, Choi, Ashiba, Baek, Jun, Kim and Park.)