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Laser-driven semiconductor switch for generating nanosecond pulses from a megawatt gyrotron.
- Source :
-
Applied physics letters [Appl Phys Lett] 2019 Apr 22; Vol. 114 (16), pp. 164102. Date of Electronic Publication: 2019 Apr 24. - Publication Year :
- 2019
-
Abstract
- A laser-driven semiconductor switch (LDSS) employing silicon (Si) and gallium arsenide (GaAs) wafers has been used to produce nanosecond-scale pulses from a 3 μ s, 110 GHz gyrotron at the megawatt power level. Photoconductivity was induced in the wafers using a 532 nm laser, which produced 6 ns, 230 mJ pulses. Irradiation of a single Si wafer by the laser produced 110 GHz RF pulses with a 9 ns width and >70% reflectance. Under the same conditions, a single GaAs wafer yielded 24 ns 110 GHz RF pulses with >78% reflectance. For both semiconductor materials, a higher value of reflectance was observed with increasing 110 GHz beam intensity. Using two active wafers, pulses of variable length down to 3 ns duration were created. The switch was tested at incident 110 GHz RF power levels up to 600 kW. A 1-D model is presented that agrees well with the experimentally observed temporal pulse shapes obtained with a single Si wafer. The LDSS has many potential uses in high power millimeter-wave research, including testing of high-gradient accelerator structures.<br /> (Copyright © 2019 Author(s).)
Details
- Language :
- English
- ISSN :
- 0003-6951
- Volume :
- 114
- Issue :
- 16
- Database :
- MEDLINE
- Journal :
- Applied physics letters
- Publication Type :
- Academic Journal
- Accession number :
- 32127718
- Full Text :
- https://doi.org/10.1063/1.5093639