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Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates.

Authors :
Prabaswara A
Kim H
Min JW
Subedi RC
Anjum DH
Davaasuren B
Moore K
Conroy M
Mitra S
Roqan IS
Ng TK
Alshareef HN
Ooi BS
Source :
ACS nano [ACS Nano] 2020 Feb 25; Vol. 14 (2), pp. 2202-2211. Date of Electronic Publication: 2020 Feb 03.
Publication Year :
2020

Abstract

Growing III-nitride nanowires on 2D materials is advantageous, as it effectively decouples the underlying growth substrate from the properties of the nanowires. As a relatively new family of 2D materials, MXenes are promising candidates as III-nitride nanowire nucleation layers capable of providing simultaneous transparency and conductivity. In this work, we demonstrate the direct epitaxial growth of GaN nanowires on Ti <subscript>3</subscript> C <subscript>2</subscript> MXene films. The MXene films consist of nanoflakes spray coated onto an amorphous silica substrate. We observed an epitaxial relationship between the GaN nanowires and the MXene nanoflakes due to the compatibility between the triangular lattice of Ti <subscript>3</subscript> C <subscript>2</subscript> MXene and the hexagonal structure of wurtzite GaN. The GaN nanowires on MXene show good material quality and partial transparency at visible wavelengths. Nanoscale electrical characterization using conductive atomic force microscopy reveals a Schottky barrier height of ∼330 meV between the GaN nanowire and the Ti <subscript>3</subscript> C <subscript>2</subscript> MXene film. Our work highlights the potential of using MXene as a transparent and conductive preorienting nucleation layer for high-quality GaN growth on amorphous substrates.

Details

Language :
English
ISSN :
1936-086X
Volume :
14
Issue :
2
Database :
MEDLINE
Journal :
ACS nano
Publication Type :
Academic Journal
Accession number :
31986010
Full Text :
https://doi.org/10.1021/acsnano.9b09126