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Nonvolatile Memory and Artificial Synapse Based on the Cu/P(VDF-TrFE)/Ni Organic Memtranstor.
- Source :
-
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2020 Jan 29; Vol. 12 (4), pp. 4673-4677. Date of Electronic Publication: 2020 Jan 14. - Publication Year :
- 2020
-
Abstract
- We demonstrate a flexible nonvolatile multilevel memory and artificial synaptic devices based on the Cu/P(VDF-TrFE)/Ni memtranstor which exhibits pronounced nonlinear magnetoelectric effects at room temperature. The states of the magnetoelectric voltage coefficient α <subscript>E</subscript> of the memtranstor are used to encode binary information. By applying selective electric-field pulses, the states of α <subscript>E</subscript> can be switched repeatedly among 2 <superscript> n </superscript> states ( n = 1, 2, 3) in a zero dc bias magnetic field. In addition, the magnetoelectric coefficient is used to act as synaptic weight, and the induced magnetoelectric voltage V <subscript>ME</subscript> is regarded as postsynaptic potentials (excitatory or inhibitory). The artificial synaptic devices based on the Cu/P(VDF-TrFE)/Ni memtranstor display the long-term potentiation (depression) and spiking-time-dependent plasticity behaviors. The advantages of a simple structure, flexibility, multilevel, and self-biasing make the Cu/P(VDF-TrFE)/Ni organic memtranstor a promising candidate for applications in nonvolatile memory as well as artificial synaptic devices with low energy consumption.
Details
- Language :
- English
- ISSN :
- 1944-8252
- Volume :
- 12
- Issue :
- 4
- Database :
- MEDLINE
- Journal :
- ACS applied materials & interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 31898883
- Full Text :
- https://doi.org/10.1021/acsami.9b19510