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Origin of the Flat Band in Heavily Cs-Doped Graphene.

Authors :
Ehlen N
Hell M
Marini G
Hasdeo EH
Saito R
Falke Y
Goerbig MO
Di Santo G
Petaccia L
Profeta G
Grüneis A
Source :
ACS nano [ACS Nano] 2020 Jan 28; Vol. 14 (1), pp. 1055-1069. Date of Electronic Publication: 2019 Dec 20.
Publication Year :
2020

Abstract

A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we show that the flat band in graphene can be achieved by sandwiching a graphene monolayer by two cesium (Cs) layers. We investigate the flat band by a combination of angle-resolved photoemission spectroscopy experiment and the calculations. Our work highlights that charge transfer, zone folding of graphene bands, and the covalent bonding between C and Cs atoms are the origin of the flat energy band formation. Analysis of the Stoner criterion for the flat band suggests the presence of a ferromagnetic instability. The presented approach is an alternative route for obtaining flat band materials to twisting bilayer graphene which yields thermodynamically stable flat band materials in large areas.

Details

Language :
English
ISSN :
1936-086X
Volume :
14
Issue :
1
Database :
MEDLINE
Journal :
ACS nano
Publication Type :
Academic Journal
Accession number :
31825586
Full Text :
https://doi.org/10.1021/acsnano.9b08622