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Anomalous magnetoresistance due to longitudinal spin fluctuations in a J eff  = 1/2 Mott semiconductor.

Authors :
Hao L
Wang Z
Yang J
Meyers D
Sanchez J
Fabbris G
Choi Y
Kim JW
Haskel D
Ryan PJ
Barros K
Chu JH
Dean MPM
Batista CD
Liu J
Source :
Nature communications [Nat Commun] 2019 Nov 22; Vol. 10 (1), pp. 5301. Date of Electronic Publication: 2019 Nov 22.
Publication Year :
2019

Abstract

As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen with an antiferromagnetic order that resists external control. We report on the observation of a positive magnetoresistance that probes the staggered susceptibility of a pseudospin-half square-lattice Mott insulator built as an artificial SrIrO <subscript>3</subscript> /SrTiO <subscript>3</subscript> superlattice. Its size is particularly large in the high-temperature insulating paramagnetic phase near the Néel transition. This magnetoresistance originates from a collective charge response to the large longitudinal spin fluctuations under a linear coupling between the external magnetic field and the staggered magnetization enabled by strong spin-orbit interaction. Our results demonstrate a magnetic control of the binding energy of the fluctuating particle-hole pairs in the Slater-Mott crossover regime analogous to the Bardeen-Cooper-Schrieffer-to-Bose-Einstein condensation crossover of ultracold-superfluids.

Details

Language :
English
ISSN :
2041-1723
Volume :
10
Issue :
1
Database :
MEDLINE
Journal :
Nature communications
Publication Type :
Academic Journal
Accession number :
31757946
Full Text :
https://doi.org/10.1038/s41467-019-13271-6