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Anomalous magnetoresistance due to longitudinal spin fluctuations in a J eff = 1/2 Mott semiconductor.
- Source :
-
Nature communications [Nat Commun] 2019 Nov 22; Vol. 10 (1), pp. 5301. Date of Electronic Publication: 2019 Nov 22. - Publication Year :
- 2019
-
Abstract
- As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen with an antiferromagnetic order that resists external control. We report on the observation of a positive magnetoresistance that probes the staggered susceptibility of a pseudospin-half square-lattice Mott insulator built as an artificial SrIrO <subscript>3</subscript> /SrTiO <subscript>3</subscript> superlattice. Its size is particularly large in the high-temperature insulating paramagnetic phase near the Néel transition. This magnetoresistance originates from a collective charge response to the large longitudinal spin fluctuations under a linear coupling between the external magnetic field and the staggered magnetization enabled by strong spin-orbit interaction. Our results demonstrate a magnetic control of the binding energy of the fluctuating particle-hole pairs in the Slater-Mott crossover regime analogous to the Bardeen-Cooper-Schrieffer-to-Bose-Einstein condensation crossover of ultracold-superfluids.
Details
- Language :
- English
- ISSN :
- 2041-1723
- Volume :
- 10
- Issue :
- 1
- Database :
- MEDLINE
- Journal :
- Nature communications
- Publication Type :
- Academic Journal
- Accession number :
- 31757946
- Full Text :
- https://doi.org/10.1038/s41467-019-13271-6