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Bias-Voltage Driven Switching of the Charge-Density-Wave and Normal Metallic Phases in 1T-TaS 2 Thin-Film Devices.
- Source :
-
ACS nano [ACS Nano] 2019 Jun 25; Vol. 13 (6), pp. 7231-7240. Date of Electronic Publication: 2019 Jun 14. - Publication Year :
- 2019
-
Abstract
- We report on switching among three charge-density-wave phases, commensurate, nearly commensurate, incommensurate, and the high-temperature normal metallic phase in thin-film 1T-TaS <subscript>2</subscript> devices induced by application of an in-plane bias voltage. The switching among all phases has been achieved over a wide temperature range, from 77 to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the incommensurate charge-density-wave phase to the normal metal phase. The noise spectral density exhibits sharp increases at the phase transition points, which correspond to the step-like changes in resistivity. Assignment of the phases is consistent with low-field resistivity measurements over the temperature range from 77 to 600 K. Analysis of the experimental data and calculations of heat dissipation indicate that Joule heating plays a dominant role in the voltage induced transitions in the 1T-TaS <subscript>2</subscript> devices on Si/SiO <subscript>2</subscript> substrates, contrary to some recent claims. The possibility of the bias-voltage switching among four different phases of 1T-TaS <subscript>2</subscript> is a promising step toward nanoscale device applications. The results also demonstrate the potential of noise spectroscopy for investigating and identifying phase transitions in the materials.
Details
- Language :
- English
- ISSN :
- 1936-086X
- Volume :
- 13
- Issue :
- 6
- Database :
- MEDLINE
- Journal :
- ACS nano
- Publication Type :
- Academic Journal
- Accession number :
- 31173685
- Full Text :
- https://doi.org/10.1021/acsnano.9b02870