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Synthesis of Wafer-Scale Monolayer WS 2 Crystals toward the Application in Integrated Electronic Devices.

Authors :
Chen J
Shao K
Yang W
Tang W
Zhou J
He Q
Wu Y
Zhang C
Li X
Yang X
Wu Z
Kang J
Source :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2019 May 29; Vol. 11 (21), pp. 19381-19387. Date of Electronic Publication: 2019 May 14.
Publication Year :
2019

Abstract

Two-dimensional transition-metal dichalcogenides (TMDCs) possess unique electronic and optical properties, which open up a new opportunity for atomically thin optoelectronic devices. Synthesizing large-scale monolayer TMDCs on the SiO <subscript>2</subscript> /Si substrate is crucial for practical applications, however, it remains a big challenge. In this work, a method which combines chemical vapor deposition (CVD) and thermal evaporation was employed to grow monolayer tungsten disulfide (WS <subscript>2</subscript> ) crystals. Through controlling the density and the distribution of W precursors, a wafer-scale continuous uniform WS <subscript>2</subscript> film was achieved, with the structural and spectral characterizations confirming a monolayer configuration and a high crystalline quality. Wafer-scale field-effect transistor arrays based on the monolayer WS <subscript>2</subscript> were fabricated. The devices show superior electrical performances, and the maximal mobility is almost 1 order of magnitude higher than those of CVD-grown large-scale TMDC devices reported so far.

Details

Language :
English
ISSN :
1944-8252
Volume :
11
Issue :
21
Database :
MEDLINE
Journal :
ACS applied materials & interfaces
Publication Type :
Academic Journal
Accession number :
31055914
Full Text :
https://doi.org/10.1021/acsami.9b04791