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AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts.
- Source :
-
Micromachines [Micromachines (Basel)] 2018 Oct 25; Vol. 9 (11). Date of Electronic Publication: 2018 Oct 25. - Publication Year :
- 2018
-
Abstract
- AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3⁻0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.
Details
- Language :
- English
- ISSN :
- 2072-666X
- Volume :
- 9
- Issue :
- 11
- Database :
- MEDLINE
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- 30715045
- Full Text :
- https://doi.org/10.3390/mi9110546