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Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture.
- Source :
-
Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2018 Aug 02; Vol. 5 (9), pp. 1800237. Date of Electronic Publication: 2018 Aug 02 (Print Publication: 2018). - Publication Year :
- 2018
-
Abstract
- Benefiting from the technique of vertically stacking 2D layered materials (2DLMs), an advanced novel device architecture based on a top-gated MoS <subscript>2</subscript> /WSe <subscript>2</subscript> van der Waals (vdWs) heterostructure is designed. By adopting a self-aligned metal screening layer (Pd) to the WSe <subscript>2</subscript> channel, a fixed p-doped state of the WSe <subscript>2</subscript> as well as an independent doping control of the MoS <subscript>2</subscript> channel can be achieved, thus guaranteeing an effective energy-band offset modulation and large through current. In such a device, under specific top-gate voltages, a sharp PN junction forms at the edge of the Pd layer and can be effectively manipulated. By varying top-gate voltages, the device can be operated under both quasi-Esaki diode and unipolar-Zener diode modes with tunable current modulations. A maximum gate-coupling efficiency as high as ≈90% and a subthreshold swing smaller than 60 mV dec <superscript>-1</superscript> can be achieved under the band-to-band tunneling regime. The superiority of the proposed device architecture is also confirmed by comparison with a traditional heterostructure device. This work demonstrates the feasibility of a new device structure based on vdWs heterostructures and its potential in future low-power electronic and optoelectronic device applications.
Details
- Language :
- English
- ISSN :
- 2198-3844
- Volume :
- 5
- Issue :
- 9
- Database :
- MEDLINE
- Journal :
- Advanced science (Weinheim, Baden-Wurttemberg, Germany)
- Publication Type :
- Academic Journal
- Accession number :
- 30250784
- Full Text :
- https://doi.org/10.1002/advs.201800237