High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.

MLA

Zhou, Guanyu, et al. “High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.” Advanced Materials (Deerfield Beach, Fla.), July 2018, p. e1803109. EBSCOhost, https://doi.org/10.1002/adma.201803109.

APA

Zhou, G., Addou, R., Wang, Q., Honari, S., Cormier, C. R., Cheng, L., Yue, R., Smyth, C. M., Laturia, A., Kim, J., Vandenberghe, W. G., Kim, M. J., Wallace, R. M., & Hinkle, C. L. (2018). High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth. Advanced Materials (Deerfield Beach, Fla.), e1803109. https://doi.org/10.1002/adma.201803109

Chicago

Zhou, Guanyu, Rafik Addou, Qingxiao Wang, Shahin Honari, Christopher R Cormier, Lanxia Cheng, Ruoyu Yue, et al. 2018. “High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth.” Advanced Materials (Deerfield Beach, Fla.), July, e1803109. doi:10.1002/adma.201803109.