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Anomalous Photovoltaic Response of Graphene-on-GaN Schottky Photodiodes.
- Source :
-
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2018 Apr 25; Vol. 10 (16), pp. 14170-14174. Date of Electronic Publication: 2018 Apr 16. - Publication Year :
- 2018
-
Abstract
- Graphene has attracted great attention as an alternative to conventional metallic or transparent conducting electrodes. Despite its similarities with conventional electrodes, recent studies have shown that a single-atom layer of graphene possesses unique characteristics, such as a tunable work function and transparencies for electric potential, reactivity, and wetting. Nevertheless, a systematic analysis of graphene and semiconductor junction characteristics has not yet been carried out. Here, we report the photoresponse characteristics of graphene-on-GaN Schottky junction photodiodes (Gr-GaN SJPDs), showing a typical rectifying behavior and distinct photovoltaic and photoelectric responses. Following the initial abrupt response to UV illumination, the Gr-GaN SJPDs exhibited a distinct difference in photocarrier dynamics depending on the applied bias voltage, which is characterized by either a negative or positive change in photocurrent with time. We propose underlying mechanisms for the anomalous photocarrier dynamics based on the interplay between electrostatic molecular interactions over the one-atom-thick graphene and GaN junction and trapped photocarriers at the defect states in the GaN thin film.
Details
- Language :
- English
- ISSN :
- 1944-8252
- Volume :
- 10
- Issue :
- 16
- Database :
- MEDLINE
- Journal :
- ACS applied materials & interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 29620853
- Full Text :
- https://doi.org/10.1021/acsami.8b02043