Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact.

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>10⁷A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.
Competing Interests: The authors declare no conflict of interest. The founding sponsors had no role in the design of the study; in the collection, analyses, or interpretation of data; in the writing of the manuscript, and in the decision to publish the results.