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High-quality monolayer superconductor NbSe 2 grown by chemical vapour deposition.

Authors :
Wang H
Huang X
Lin J
Cui J
Chen Y
Zhu C
Liu F
Zeng Q
Zhou J
Yu P
Wang X
He H
Tsang SH
Gao W
Suenaga K
Ma F
Yang C
Lu L
Yu T
Teo EHT
Liu G
Liu Z
Source :
Nature communications [Nat Commun] 2017 Aug 30; Vol. 8 (1), pp. 394. Date of Electronic Publication: 2017 Aug 30.
Publication Year :
2017

Abstract

The discovery of monolayer superconductors bears consequences for both fundamental physics and device applications. Currently, the growth of superconducting monolayers can only occur under ultrahigh vacuum and on specific lattice-matched or dangling bond-free substrates, to minimize environment- and substrate-induced disorders/defects. Such severe growth requirements limit the exploration of novel two-dimensional superconductivity and related nanodevices. Here we demonstrate the experimental realization of superconductivity in a chemical vapour deposition grown monolayer material-NbSe <subscript>2</subscript> . Atomic-resolution scanning transmission electron microscope imaging reveals the atomic structure of the intrinsic point defects and grain boundaries in monolayer NbSe <subscript>2</subscript> , and confirms the low defect concentration in our high-quality film, which is the key to two-dimensional superconductivity. By using monolayer chemical vapour deposited graphene as a protective capping layer, thickness-dependent superconducting properties are observed in as-grown NbSe <subscript>2</subscript> with a transition temperature increasing from 1.0 K in monolayer to 4.56 K in 10-layer.Two-dimensional superconductors will likely have applications not only in devices, but also in the study of fundamental physics. Here, Wang et al. demonstrate the CVD growth of superconducting NbSe2 on a variety of substrates, making these novel materials increasingly accessible.

Details

Language :
English
ISSN :
2041-1723
Volume :
8
Issue :
1
Database :
MEDLINE
Journal :
Nature communications
Publication Type :
Academic Journal
Accession number :
28855521
Full Text :
https://doi.org/10.1038/s41467-017-00427-5