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On-wafer probing-kit for RF characterization of silicon photonic integrated transceivers.
- Source :
-
Optics express [Opt Express] 2017 Jun 12; Vol. 25 (12), pp. 13340-13350. - Publication Year :
- 2017
-
Abstract
- A wafer-level and high-efficiency radio frequency (RF) testing of a photonic device is highly desired in the fabrication and characterization of large-scale photonic integration circuits. In this work, we propose on-wafer probing kit designs, and demonstrate a damage-free, self-calibrated RF characterization of an integrated silicon photonic transceiver with a heterodyne mixing approach. Reduced or even free of fiber coupling off chip operation can be achieved with the on-wafer probing-kit to extract the frequency responses of broadband modulators and photodetectors in the photonic integration transceiver, with no requirement of electro-optical or opto-electrical calibration. A proof-of-concept probing kit is designed and fabricated with an on-chip electroabsorption modulator (EAM) and photodetectors by heterogeneously integrated III-V material on silicon substrate. On-wafer RF measurements with the self-calibration method are experimentally demonstrated with an accuracy analysis compared with the conventional swept-frequency method. The on-wafer and full-electrical test nature of the probing kit significantly advances performance monitoring of photonic integration circuits during chip fabrication, and promisingly offers predictable outcome and yield analysis before packaging.
Details
- Language :
- English
- ISSN :
- 1094-4087
- Volume :
- 25
- Issue :
- 12
- Database :
- MEDLINE
- Journal :
- Optics express
- Publication Type :
- Academic Journal
- Accession number :
- 28788871
- Full Text :
- https://doi.org/10.1364/OE.25.013340