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Low voltage 25Gbps silicon Mach-Zehnder modulator in the O-band.
- Source :
-
Optics express [Opt Express] 2017 May 15; Vol. 25 (10), pp. 11217-11222. - Publication Year :
- 2017
-
Abstract
- In this work, a 25 Gb ps silicon push-pull Mach-Zehnder modulator operating in the O-Band (1260 nm - 1360 nm) of optical communications and fabricated on a 300 mm platform is presented. The measured modulation efficiency (VπLπ) was comprised between 0.95 V cm and 1.15 V cm, which is comparable to the state-of-the-art modulators in the C-Band, that enabled its use with a driving voltage of 3.3 V <subscript>pp</subscript> , compatible with BiCMOS technology. An extinction ratio of 5 dB and an on-chip insertion losses of 3.6 dB were then demonstrated at 25 Gb ps.
Details
- Language :
- English
- ISSN :
- 1094-4087
- Volume :
- 25
- Issue :
- 10
- Database :
- MEDLINE
- Journal :
- Optics express
- Publication Type :
- Academic Journal
- Accession number :
- 28788803
- Full Text :
- https://doi.org/10.1364/OE.25.011217