Compliance-Free ZrO 2 /ZrO 2 - x /ZrO 2 Resistive Memory with Controllable Interfacial Multistate Switching Behaviour.

Authors :: Huang R
Yan X
Ye S
Kashtiban R
Beanland R
Morgan KA
Charlton MDB
de Groot CHK
Source :: Nanoscale research letters [Nanoscale Res Lett] 2017 Dec; Vol. 12 (1), pp. 384. Date of Electronic Publication: 2017 Jun 02.
Publication Year :: 2017
Abstract: A controllable transformation from interfacial to filamentary switching mode is presented on a ZrO <subscript>2</subscript> /ZrO <subscript>2 - x</subscript> /ZrO <subscript>2</subscript> tri-layer resistive memory. The two switching modes are investigated with possible switching and transformation mechanisms proposed. Resistivity modulation of the ZrO <subscript>2 - x</subscript> layer is proposed to be responsible for the switching in the interfacial switching mode through injecting/retracting of oxygen ions. The switching is compliance-free due to the intrinsic series resistor by the filaments formed in the ZrO <subscript>2</subscript> layers. By tuning the RESET voltages, controllable and stable multistate memory can be achieved which clearly points towards the capability of developing the next-generation multistate high-performance memory.

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