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Lateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well.
- Source :
-
Physical review letters [Phys Rev Lett] 2017 May 19; Vol. 118 (20), pp. 206801. Date of Electronic Publication: 2017 May 19. - Publication Year :
- 2017
-
Abstract
- We present transport measurements on a lateral p-n junction in an inverted InAs/GaSb double quantum well at zero and nonzero perpendicular magnetic fields. At a zero magnetic field, the junction exhibits diodelike behavior in accordance with the presence of a hybridization gap. With an increasing magnetic field, we explore the quantum Hall regime where spin-polarized edge states with the same chirality are either reflected or transmitted at the junction, whereas those of opposite chirality undergo a mixing process, leading to full equilibration along the width of the junction independent of spin. These results lay the foundations for using p-n junctions in InAs/GaSb double quantum wells to probe the transition between the topological quantum spin Hall and quantum Hall states.
Details
- Language :
- English
- ISSN :
- 1079-7114
- Volume :
- 118
- Issue :
- 20
- Database :
- MEDLINE
- Journal :
- Physical review letters
- Publication Type :
- Academic Journal
- Accession number :
- 28581788
- Full Text :
- https://doi.org/10.1103/PhysRevLett.118.206801