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Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps.
- Source :
-
Journal of applied crystallography [J Appl Crystallogr] 2017 Mar 22; Vol. 50 (Pt 2), pp. 555-560. Date of Electronic Publication: 2017 Mar 22 (Print Publication: 2017). - Publication Year :
- 2017
-
Abstract
- The microstructure of polar GaN layers, grown by upgraded high-temperature vapour phase epitaxy on [001]-oriented sapphire substrates, was studied by means of high-resolution X-ray diffraction and transmission electron microscopy. Systematic differences between reciprocal-space maps measured by X-ray diffraction and those which were simulated for different densities of threading dislocations revealed that threading dislocations are not the only microstructure defect in these GaN layers. Conventional dark-field transmission electron microscopy and convergent-beam electron diffraction detected vertical inversion domains as an additional microstructure feature. On a series of polar GaN layers with different proportions of threading dislocations and inversion domain boundaries, this contribution illustrates the capability and limitations of coplanar reciprocal-space mapping by X-ray diffraction to distinguish between these microstructure features.
Details
- Language :
- English
- ISSN :
- 0021-8898
- Volume :
- 50
- Issue :
- Pt 2
- Database :
- MEDLINE
- Journal :
- Journal of applied crystallography
- Publication Type :
- Academic Journal
- Accession number :
- 28381980
- Full Text :
- https://doi.org/10.1107/S1600576717003612