Back to Search Start Over

Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS 2 Transistors.

Authors :
Arnold AJ
Razavieh A
Nasr JR
Schulman DS
Eichfeld CM
Das S
Source :
ACS nano [ACS Nano] 2017 Mar 28; Vol. 11 (3), pp. 3110-3118. Date of Electronic Publication: 2017 Mar 10.
Publication Year :
2017

Abstract

Neurotransmitter release in chemical synapses is fundamental to diverse brain functions such as motor action, learning, cognition, emotion, perception, and consciousness. Moreover, improper functioning or abnormal release of neurotransmitter is associated with numerous neurological disorders such as epilepsy, sclerosis, schizophrenia, Alzheimer's disease, and Parkinson's disease. We have utilized hysteresis engineering in a back-gated MoS <subscript>2</subscript> field effect transistor (FET) in order to mimic such neurotransmitter release dynamics in chemical synapses. All three essential features, i.e., quantal, stochastic, and excitatory or inhibitory nature of neurotransmitter release, were accurately captured in our experimental demonstration. We also mimicked an important phenomenon called long-term potentiation (LTP), which forms the basis of human memory. Finally, we demonstrated how to engineer the LTP time by operating the MoS <subscript>2</subscript> FET in different regimes. Our findings could provide a critical component toward the design of next-generation smart and intelligent human-like machines and human-machine interfaces.

Details

Language :
English
ISSN :
1936-086X
Volume :
11
Issue :
3
Database :
MEDLINE
Journal :
ACS nano
Publication Type :
Academic Journal
Accession number :
28260370
Full Text :
https://doi.org/10.1021/acsnano.7b00113