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Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si.
- Source :
-
Optics express [Opt Express] 2017 Feb 20; Vol. 25 (4), pp. 3927-3934. - Publication Year :
- 2017
-
Abstract
- High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} v-grooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. We achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80°C.
Details
- Language :
- English
- ISSN :
- 1094-4087
- Volume :
- 25
- Issue :
- 4
- Database :
- MEDLINE
- Journal :
- Optics express
- Publication Type :
- Academic Journal
- Accession number :
- 28241602
- Full Text :
- https://doi.org/10.1364/OE.25.003927