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Graphene-Based Fluorescence-Quenching-Related Fermi Level Elevation and Electron-Concentration Surge.

Authors :
Lin W
Tian B
Zhuang P
Yin J
Zhang C
Li Q
Shih TM
Cai W
Source :
Nano letters [Nano Lett] 2016 Sep 14; Vol. 16 (9), pp. 5737-41. Date of Electronic Publication: 2016 Aug 15.
Publication Year :
2016

Abstract

Intermolecular p-orbital overlaps in unsaturated π-conjugated systems, such as graphene and fluorescent molecules with aromatic structure, serve as the electron-exchanged path. Using Raman-mapping measurements, we observe that the fluorescence intensity of fluorescein isothiocyanate (FITC) is quenched by graphene, whereas it persists in graphene-absent substrates (SiO2). After identifying a mechanism related to photon-induced electron transfer (PET) that contributes to this fluorescence quenching phenomenon, we validate this mechanism by conducting analyses on Dirac point shifts of FITC-coated graphene. From these shifts, Fermi level elevation and the electron-concentration surge in graphene upon visible-light impingements are acquired. Finally, according to this mechanism, graphene-based biosensors are fabricated to show the sensing capability of measuring fluorescently labeled-biomolecule concentrations.

Details

Language :
English
ISSN :
1530-6992
Volume :
16
Issue :
9
Database :
MEDLINE
Journal :
Nano letters
Publication Type :
Academic Journal
Accession number :
27513317
Full Text :
https://doi.org/10.1021/acs.nanolett.6b02430