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Graphene-Based Fluorescence-Quenching-Related Fermi Level Elevation and Electron-Concentration Surge.
- Source :
-
Nano letters [Nano Lett] 2016 Sep 14; Vol. 16 (9), pp. 5737-41. Date of Electronic Publication: 2016 Aug 15. - Publication Year :
- 2016
-
Abstract
- Intermolecular p-orbital overlaps in unsaturated π-conjugated systems, such as graphene and fluorescent molecules with aromatic structure, serve as the electron-exchanged path. Using Raman-mapping measurements, we observe that the fluorescence intensity of fluorescein isothiocyanate (FITC) is quenched by graphene, whereas it persists in graphene-absent substrates (SiO2). After identifying a mechanism related to photon-induced electron transfer (PET) that contributes to this fluorescence quenching phenomenon, we validate this mechanism by conducting analyses on Dirac point shifts of FITC-coated graphene. From these shifts, Fermi level elevation and the electron-concentration surge in graphene upon visible-light impingements are acquired. Finally, according to this mechanism, graphene-based biosensors are fabricated to show the sensing capability of measuring fluorescently labeled-biomolecule concentrations.
Details
- Language :
- English
- ISSN :
- 1530-6992
- Volume :
- 16
- Issue :
- 9
- Database :
- MEDLINE
- Journal :
- Nano letters
- Publication Type :
- Academic Journal
- Accession number :
- 27513317
- Full Text :
- https://doi.org/10.1021/acs.nanolett.6b02430