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Characteristics of Ga-Rich Cu(In, Ga)Se2 Solar Cells Grown on Ga-Doped ZnO Back Contact.
- Source :
-
Journal of nanoscience and nanotechnology [J Nanosci Nanotechnol] 2016 May; Vol. 16 (5), pp. 5053-7. - Publication Year :
- 2016
-
Abstract
- Wide bandgap Cu(In,Ga)Se2 (CIGS) thin films were deposited on Ga-rich Ga:ZnO (GZO) or MoN/GZO by single-stage co-evaporation. CIGS/TCO interface phases, such as resistive n-type Ga2O3, which are likely to have formed during the high temperature growth of Ga-rich CIGS, can deteriorate the solar cell performance. Although some Ga accumulation was observed in both of the CIGS/GZO and CIGS/MoN/GZO interfaces formed at 520 degrees C, the Ga oxide layer was absent. On the other hand, their current-voltage characteristics showed strong roll-over behavior regardless of the MoN diffusion barrier. The strong Schottky barrier formation at the CLGS/GZO junction due to the low work function of GZO, was attributed to current blocking at a high forward bias.
Details
- Language :
- English
- ISSN :
- 1533-4899
- Volume :
- 16
- Issue :
- 5
- Database :
- MEDLINE
- Journal :
- Journal of nanoscience and nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 27483870
- Full Text :
- https://doi.org/10.1166/jnn.2016.12545