Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory.

Authors :: Cui A
Liu Z
Dong H
Yang F
Zhen Y
Li W
Li J
Gu C
Zhang X
Li R
Hu W
Source :: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2016 Oct; Vol. 28 (37), pp. 8227-8233. Date of Electronic Publication: 2016 Jul 20.
Publication Year :: 2016
Abstract: Nanogap electrodes arrays are fabricated by combining atomic layer deposition, adhesive tape, and chemical etching. A unipolar nonvolatile resistive-switching behavior is identified in the nanogap electrodes, showing stable, robust performance and the multibit storage ability, demonstrating great potential in ultrahigh-density storage. The formation and dissolution of Si conductive filaments and migration of Au atoms is the mechanism behind the resistive switching.<br /> (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

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