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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications.

Authors :
Wu JY
Lin CH
Feng MH
Chen CH
Su PC
Yang PW
Zheng JM
Fu CW
Yang YS
Source :
Journal of visualized experiments : JoVE [J Vis Exp] 2016 Apr 21 (110). Date of Electronic Publication: 2016 Apr 21.
Publication Year :
2016

Abstract

Surveillance using biomarkers is critical for the early detection, rapid intervention, and reduction in the incidence of diseases. In this study, we describe the preparation of polycrystalline silicon nanowire field-effect transistors (pSNWFETs) that serve as biosensing devices for biomarker detection. A protocol for chemical and biomolecular sensing by using pSNWFETs is presented. The pSNWFET device was demonstrated to be a promising transducer for real-time, label-free, and ultra-high-sensitivity biosensing applications. The source/drain channel conductivity of a pSNWFET is sensitive to changes in the environment around its silicon nanowire (SNW) surface. Thus, by immobilizing probes on the SNW surface, the pSNWFET can be used to detect various biotargets ranging from small molecules (dopamine) to macromolecules (DNA and proteins). Immobilizing a bioprobe on the SNW surface, which is a multistep procedure, is vital for determining the specificity of the biosensor. It is essential that every step of the immobilization procedure is correctly performed. We verified surface modifications by directly observing the shift in the electric properties of the pSNWFET following each modification step. Additionally, X-ray photoelectron spectroscopy was used to examine the surface composition following each modification. Finally, we demonstrated DNA sensing on the pSNWFET. This protocol provides step-by-step procedures for verifying bioprobe immobilization and subsequent DNA biosensing application.

Details

Language :
English
ISSN :
1940-087X
Issue :
110
Database :
MEDLINE
Journal :
Journal of visualized experiments : JoVE
Publication Type :
Academic Journal
Accession number :
27167162
Full Text :
https://doi.org/10.3791/53660