ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell.

Authors :: Bethge O
Nobile M
Abermann S
Glaser M
Bertagnolli E
Source :: Solar energy materials and solar cells : an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion [Sol Energy Mater Sol Cells] 2013 Oct; Vol. 117, pp. 178-182.
Publication Year :: 2013
Abstract: Various metal oxides are probed as extrinsic thin tunnel barriers in Semiconductor Insulator Semiconductor solar cells. Namely Al <subscript>2</subscript> O <subscript>3</subscript> , ZrO <subscript>2</subscript> , Y <subscript>2</subscript> O <subscript>3</subscript> , and La <subscript>2</subscript> O <subscript>3</subscript> thin films are in between n-type ZnO:Al (AZO) and p-type Si substrates by means of Atomic Layer Deposition. Low reverse dark current-density as low as 3×10 <superscript>-7</superscript>  A/cm <superscript>2</superscript> , a fill factor up to 71.3%, and open-circuit voltage as high as 527 mV are obtained, achieving conversion efficiency of 8% for the rare earth oxide La <subscript>2</subscript> O <subscript>3</subscript> . ZrO <subscript>2</subscript> and notably Al <subscript>2</subscript> O <subscript>3</subscript> show drawbacks in performance suggesting an adverse reactivity with AZO as also indicated by X-ray Photoelectron Spectroscopy.

Language :: English
ISSN :: 0927-0248
Volume :: 117
Database :: MEDLINE
Journal :: Solar energy materials and solar cells : an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion
Publication Type :: Academic Journal
Accession number :: 26877596
Full Text :: https://doi.org/10.1016/j.solmat.2013.04.028

Full Text Access

Tools