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Room temperature spin valve effect in NiFe/WS₂/Co junctions.
- Source :
-
Scientific reports [Sci Rep] 2016 Feb 12; Vol. 6, pp. 21038. Date of Electronic Publication: 2016 Feb 12. - Publication Year :
- 2016
-
Abstract
- The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes.
Details
- Language :
- English
- ISSN :
- 2045-2322
- Volume :
- 6
- Database :
- MEDLINE
- Journal :
- Scientific reports
- Publication Type :
- Academic Journal
- Accession number :
- 26868638
- Full Text :
- https://doi.org/10.1038/srep21038