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Construction of a Semiconductor-Biological Interface for Solar Energy Conversion: p-Doped Silicon/Photosystem I/Zinc Oxide.

Authors :
Beam JC
LeBlanc G
Gizzie EA
Ivanov BL
Needell DR
Shearer MJ
Jennings GK
Lukehart CM
Cliffel DE
Source :
Langmuir : the ACS journal of surfaces and colloids [Langmuir] 2015 Sep 15; Vol. 31 (36), pp. 10002-7. Date of Electronic Publication: 2015 Sep 03.
Publication Year :
2015

Abstract

The interface between photoactive biological materials with two distinct semiconducting electrodes is challenging both to develop and analyze. Building off of our previous work using films of photosystem I (PSI) on p-doped silicon, we have deposited a crystalline zinc oxide (ZnO) anode using confined-plume chemical deposition (CPCD). We demonstrate the ability of CPCD to deposit crystalline ZnO without damage to the PSI biomaterial. Using electrochemical techniques, we were able to probe this complex semiconductor-biological interface. Finally, as a proof of concept, a solid-state photovoltaic device consisting of p-doped silicon, PSI, ZnO, and ITO was constructed and evaluated.

Details

Language :
English
ISSN :
1520-5827
Volume :
31
Issue :
36
Database :
MEDLINE
Journal :
Langmuir : the ACS journal of surfaces and colloids
Publication Type :
Academic Journal
Accession number :
26318861
Full Text :
https://doi.org/10.1021/acs.langmuir.5b02334