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Gapped Surface States in a Strong-Topological-Insulator Material.

Authors :
Weber AP
Gibson QD
Ji H
Caruso AN
Fedorov AV
Cava RJ
Valla T
Source :
Physical review letters [Phys Rev Lett] 2015 Jun 26; Vol. 114 (25), pp. 256401. Date of Electronic Publication: 2015 Jun 23.
Publication Year :
2015

Abstract

A three-dimensional strong-topological insulator or semimetal hosts topological surface states which are often said to be gapless so long as time-reversal symmetry is preserved. This narrative can be mistaken when surface state degeneracies occur away from time-reversal-invariant momenta. The mirror invariance of the system then becomes essential in protecting the existence of a surface Fermi surface. Here we show that such a case exists in the strong-topological-semimetal Bi(4)Se(3). Angle-resolved photoemission spectroscopy and ab initio calculations reveal partial gapping of surface bands on the Bi(2)Se(3) termination of Bi(4)Se(3)(111), where an 85 meV gap along Γ̅K̅ closes to zero toward the mirror-invariant Γ̅M̅ azimuth. The gap opening is attributed to an interband spin-orbit interaction that mixes states of opposite spin helicity.

Details

Language :
English
ISSN :
1079-7114
Volume :
114
Issue :
25
Database :
MEDLINE
Journal :
Physical review letters
Publication Type :
Academic Journal
Accession number :
26197136
Full Text :
https://doi.org/10.1103/PhysRevLett.114.256401