Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite.

MLA

Anyebe, E. A., et al. “Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite.” Nano Letters, vol. 15, no. 7, July 2015, pp. 4348–55. EBSCOhost, https://doi.org/10.1021/acs.nanolett.5b00411.

APA

Anyebe, E. A., Sanchez, A. M., Hindmarsh, S., Chen, X., Shao, J., Rajpalke, M. K., Veal, T. D., Robinson, B. J., Kolosov, O., Anderson, F., Sundaram, R., Wang, Z. M., Falko, V., & Zhuang, Q. (2015). Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite. Nano Letters, 15(7), 4348–4355. https://doi.org/10.1021/acs.nanolett.5b00411

Chicago

Anyebe, E A, A M Sanchez, S Hindmarsh, X Chen, J Shao, M K Rajpalke, T D Veal, et al. 2015. “Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite.” Nano Letters 15 (7): 4348–55. doi:10.1021/acs.nanolett.5b00411.