Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors.

MLA

Tsai, Meng-Yen, et al. “Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors.” ACS Applied Materials & Interfaces, vol. 7, no. 23, June 2015, pp. 12850–55. EBSCOhost, https://doi.org/10.1021/acsami.5b02336.

APA

Tsai, M.-Y., Tarasov, A., Hesabi, Z. R., Taghinejad, H., Campbell, P. M., Joiner, C. A., Adibi, A., & Vogel, E. M. (2015). Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors. ACS Applied Materials & Interfaces, 7(23), 12850–12855. https://doi.org/10.1021/acsami.5b02336

Chicago

Tsai, Meng-Yen, Alexey Tarasov, Zohreh R Hesabi, Hossein Taghinejad, Philip M Campbell, Corey A Joiner, Ali Adibi, and Eric M Vogel. 2015. “Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors.” ACS Applied Materials & Interfaces 7 (23): 12850–55. doi:10.1021/acsami.5b02336.