Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperature.

MLA

Lavieville, Romain, et al. “Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.” Nano Letters, vol. 15, no. 5, May 2015, pp. 2958–64. EBSCOhost, https://doi.org/10.1021/nl504806s.

APA

Lavieville, R., Triozon, F., Barraud, S., Corna, A., Jehl, X., Sanquer, M., Li, J., Abisset, A., Duchemin, I., & Niquet, Y.-M. (2015). Quantum dot made in metal oxide silicon-nanowire field effect transistor working at room temperature. Nano Letters, 15(5), 2958–2964. https://doi.org/10.1021/nl504806s

Chicago

Lavieville, Romain, François Triozon, Sylvain Barraud, Andrea Corna, Xavier Jehl, Marc Sanquer, Jing Li, Antoine Abisset, Ivan Duchemin, and Yann-Michel Niquet. 2015. “Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.” Nano Letters 15 (5): 2958–64. doi:10.1021/nl504806s.