The Notch intracellular domain represses CRE-dependent transcription.

Authors :: Hallaq R
Volpicelli F
Cuchillo-Ibanez I
Hooper C
Mizuno K
Uwanogho D
Causevic M
Asuni A
To A
Soriano S
Giese KP
Lovestone S
Killick R
Source :: Cellular signalling [Cell Signal] 2015 Mar; Vol. 27 (3), pp. 621-9. Date of Electronic Publication: 2014 Dec 03.
Publication Year :: 2015
Abstract: Members of the cyclic-AMP response-element binding protein (CREB) transcription factor family regulate the expression of genes needed for long-term memory formation. Loss of Notch impairs long-term, but not short-term, memory in flies and mammals. We investigated if the Notch-1 (N1) exerts an effect on CREB-dependent gene transcription. We observed that N1 inhibits CREB mediated activation of cyclic-AMP response element (CRE) containing promoters in a γ-secretase-dependent manner. We went on to find that the γ-cleaved N1 intracellular domain (N1ICD) sequesters nuclear CREB1α, inhibits cAMP/PKA-mediated neurite outgrowth and represses the expression of specific CREB regulated genes associated with learning and memory in primary cortical neurons. Similar transcriptional effects were observed with the N2ICD, N3ICD and N4ICDs. Together, these observations indicate that the effects of Notch on learning and memory are, at least in part, via an effect on CREB-regulated gene expression.<br /> (Copyright © 2014. Published by Elsevier Inc.)